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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) *Good Linearity of hFE APPLICATIONS *Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i UNIT 200 V 120 V 8 V 7 A 14 A 3 A 70 W .cn mi e Collector Current-Pulse IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 3A; IB= 0.3A B 2SC3835G MIN 120 TYP. MAX UNIT V 0.5 1.2 100 100 160 220 30 110 V V A A IC= 3A; IB= 0.3A B VCB= 200V; IE= 0 VEB= 8V; IC= 0 IC= 3A ; VCE= 4V IE= -0.5A ; VCE= 12V Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IE=0 ; VCB=10V;ftest=1.0MHz .cn mi e MHz pF 0.5 3.0 0.5 s s s IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7; VCC= 50V isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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